Focus Sessions – Topological Materials for Electronics

All times are listed in US Eastern Time (UTC-4).

M1Or3A – Focus Session – Topological Materials for Electronics I
        Monday, July 19, 2021 — 2:00 p.m. – 4:30 p.m.
Session Chairs: Chris Palmstrom, University of California, Santa Barbara & Kang Wang, UCLA
2:00 p.m. – 2:30 p.m. M1Or3A-01 [Invited]: Understanding the Link Between Magnetism and Topology
    Matthew Gilbert
2:30 p.m. – 3:00 p.m. M1Or3A-02 [Invited]: Epitaxial Growth and Studies of Topological Materials    Chris Palmstrom
3:00 p.m. – 3:30 p.m. M1Or3A-03 [Invited]: Topological Structure and Properties    Kang Wang
3:30 p.m. – 4:00 p.m. M1Or3A-04 [Invited]: Topological order driven under interface magnetic exchange field    Peng Wei
4:00 p.m. – 4:30 p.m. M1Or3A-05 [Invited]: Exploring the topological phase of narrow-gap materials via magneto-spectroscopy    Zhigang Jiang
     
M2Or3A – Focus Session: Topological Materials for Electronics II
        Tuesday, July 20, 2021 — 2:00 p.m. – 4:30 p.m.
Session Chairs: Mingzhong Wu, Colorado State University & Kaya Wei, NHMFL / FSU
2:00 p.m. – 2:30 p.m. M2Or3A-01 [Invited]: Recent results on the electrodynamics of topological semimetals: Mn3Sn, Cd3As2, Pr2Ir2O7 and beyond…    N. Peter Armitage
2:30 p.m. – 3:00 p.m. M2Or3A-02 [Invited]: Low temperature physics/technology based on topological materials    Liang Fu
3:00 p.m. –  3:30 p.m. M2Or3A-03 [Invited]: Withdrawn    
3:30 p.m. – 4:00 p.m. M2Or3A-04 [Invited]: Tuning the Chern Number in Quantum Anomalous Hall insulators    Cui-Zu Chang
4:00 p.m. – 4:30 p.m. M2Or3A-05 [Invited]: Interface-driven topologically nontrivial magnetism in Cr2Te3 ultrathin films    Hang Chi
     
     
M3Or3B – Focus Session: Topological Materials for Electronics III
  
       Wednesday, July 21, 2021 — 2:00 p.m. – 3:30 p.m.  
Session Chairs: Zhigang Jiang, Georgia Tech  
     
2:00 p.m. – 2:30 p.m. M3Or3B-01 [Invited]: Surface State Magnetoresistance in Proximity Magnetized Topological Insulators   Nadya Mason
2:30 p.m. – 3:00 p.m. M3Or3B-02 [Invited]: Damping Enhancement and Magnetization Switching in a Ferromagnet Induced by Surface States in a Topological Dirac Semimetal   Mingzhong Wu
3:00 p.m. – 3:30 p.m. M3Or3B-03 [Invited]: Magnetoelectric behavior via a spin state transition   Shalinee Chikara
   
M3Or3C – Panel Session: Reflection, Insight, and Perspective on Topological Phenomena Exhibited/Enabled in the Space of Solid State Matters
       Wednesday, July 21, 2021 — 3:30 p.m. – 5:30 p.m.
Session Chair: Marc Ulrich, Army Research Office & TBD
Panel Speakers include: Chris Palmstrom, Peng Wei, Zhigang Jiang, N. Peter Armitage, Liang Fu, Cui-Zu-Chang, Hang Chi, Mingzhong Wu, Ramesh Budhani, Luis Balicas, Ritesh Agarwal, Cheng Gong, Ki Wook Kim 
 
The following are some suggested questions for everyone to think about:
  1. To date, only tenuous examples of room temperature topological effects have been reported. It this simply a materials quality problem or a matter of discovering a new topological material, or are there fundamental constraints that are not widely discussed? How well do we understand the physics and chemistry that may enable “room temperature” topological behavior?
  2. Experts have been continuously searching for any combinations of stable or metastable single phase compounds/alloys for topological properties with prominent theoretical groups developing models and databases to guide exploratory studies for new topological materials. Do you expect the bismuth dichalcogenide family to remain the most prominent of the 3D topological insulators? Should the push for room temperature topological materials be aggressively pursued? If so what strategy do you recommend?
  3. Besides single phase materials, will “hidden phase” or “multiple phase” matter be a promising space to explore? How do we define the phase at a hetero-interface?
  4. Can and should the semiconductor surface science of the 1970s and 1980s be duplicated within topological materials? Can a surface\interface science that includes atomic-level spin structure be developed?
  5. What new growth and characterization inventions are needed to propel the field of topological materials?
  6. Is current State of the Art computation capability providing sufficient “fidelity” to enhance our understanding of the physics of topological materials and their heterostructures with materials with various order parameters? Are there problems that are not solvable with today’s computational infrastructure and if so, what sort of advances are necessary?
  7. In semiconductors, carrier transport characteristics like mobility, fermi velocity and minority carrier lifetime are key factors to determine the suitability of a material for electronic devices. Do we have an idea of the carrier dynamics in topological materials and how it relates to proposed device concepts?
  8. Though topological materials are reviving spintronic concepts, it is essentially impossible to compete with more than half a century of technological refinement in semiconductor devices either for logic or memory. What technology space is most likely to be impacted by advances in topological materials? Any thoughts about how best to get there? Does increased interest in cryogenic computing give topological materials an opportunity?
   
M4Or3A – Focus Session: Topological Materials for Electronics IV
       Thursday, July 22, 2021 — 2:00 p.m. – 4:30 p.m.
Session Chairs: Luis Balicas, NHMFL/FSU & Ryan Baumbach, NHMFL/FSU
   
2:00 p.m. – 2:30 p.m. M4Or3A-1 [Invited]: Spin Transport in Cd3As2 and Topological Materials    Adam Friedman
2:30 p.m. – 3:00 p.m. M4Or3A-2 [Invited]: Spin Pumping into Thin Films of Topological Insulator BiSb    Ramesh Budhani
3:00 p.m. – 3:30 p.m. M4Or3A-3 [Invited]: Magnetic field-induced non-trivial electronic topology in Fe$_3$GeTe$_2$    Luis Balicas
3:30 p.m. – 4:00 p.m. M4Or3A-4 [Invited]: Novel Band Structures of Topological Metals with the Tetradymite Structure    Ryan Baumbach
4:00 p.m. – 4:30 p.m. M4Or3A-5 [Invited]: Fermi Surfaces of Flat-Band Intermetallic APd3 (A = Pb, Sn)    Kaya Wei